| 1991 |
| Agis Iliadis, W. Lee, S. Tabatabaei, pp. = , Novel Frequency Dispersive Measurement Technique for Interface States in FET's |
| | |
| 1990 |
| Agis Iliadis, J. Zahurak, D. Sivco, A. Cho, YES, pp. = , AlInAs/InGaAs superlattice channel heterostructure FET with high positive negative transconductance |
| | |
| Agis Iliadis, YES, pp. = , The InP/SiO2 Interface |
| | |
| 1989 |
| Agis Iliadis, YES, pp. = , High speed circuit reliability |
| | |
| Agis Iliadis, O. Aina, W. Lee, pp. = , A study of enhanced barrier gates for n InP MESFET’s |
| | |
| 1988 |
| Agis Iliadis, O. Aina, L. Stecker, E. Martin, M. Mattingly, pp. = , InP/InGaAs heterostructure insulated gate FET's |
| | |
| Agis Iliadis, pp. = , Schottky barrier height enhancement in n InP for MESFET applications |
| | |
| 1987 |
| Agis Iliadis, D. Ioannou, S. Laih, E. Martin, YES, pp. = , DLTS study of interface and bulk traps in undoped InP grown by MBE |
| | |
| Agis Iliadis, L. Aina, H. Hier, M. Mattingly, J. O'Connor, YES, pp. = , Infrared emission spectroscopy of deep levels in AlGaAs/GaAs, InP/InGaAs and InAlAs/InGaAs heterostructures |
| | |
| Agis Iliadis, S. Ovadia, pp. = , Selected photoluminescence transitions in unintentionally doped InP grown by molecular beam epitaxy |
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