Greek Journal
| Authors: | Alam J., Bathe R., Vispute R., Zavada J., Litton C., Iliadis A., Mohammad S. |
|---|---|
| Title: | Effect of dislocations on luminescence properties of silicon doped GaN grown by metal organic chemical vapor deposition method |
| Journal: | J Vac. Sci. Tech. B |
| Volume: | 22 |
| Number: | 2 |
| Pages: | 624-629 |
| Year: | 2004 |
| Publisher: | |
| To appear: | No |
| Link: | |
| ISI: | No |
| Impact Factor: | |
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| Abstract: |