Journal
Authors: | Martin E., Aina O., Mattingly M., Stecker L., Hempfling E., Iliadis A. |
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Title: | Microwave and DC characteristics of InP/InGaAs heterostructure insulated gate FETs employing InAlAs as the gate insulator |
Journal: | Electronics Letters |
Volume: | 24 |
Number: | 0 |
Pages: | 1242-1243 |
Year: | 1988 |
Publisher: | |
To appear: | No |
Link: | |
ISI: | No |
Impact Factor: | |
File name: | |
Abstract: |