Journal

Authors: Martin E., Aina O., Iliadis A., Mattingly M., Stecker L.
Title: Undoped InP/InGaAs heterostructure insulated gate FETs grown by OMVPE with PECVD deposited SiO2 as gate insulator
Journal: IEEE Elect. Dev. Lett.
Volume: 9
Number: 0
Pages: 500- 502
Year: 1988
Publisher:
To appear: No
Link:
ISI: No
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Abstract: