Journal
Authors: | Martin E., Aina O., Iliadis A., Mattingly M., Stecker L. |
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Title: | Undoped InP/InGaAs heterostructure insulated gate FETs grown by OMVPE with PECVD deposited SiO2 as gate insulator |
Journal: | IEEE Elect. Dev. Lett. |
Volume: | 9 |
Number: | 0 |
Pages: | 500- 502 |
Year: | 1988 |
Publisher: | |
To appear: | No |
Link: | |
ISI: | No |
Impact Factor: | |
File name: | |
Abstract: |