| 1988 |
| Agis Iliadis, J. Huang, D. Ioannou, Deep states and misfit dislocations in indium doped GaAs Layers grown by MBE, Appl. Phys. Lett., Vol = 52, pp. = 0, , 2258-2260, 1988, |
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| Agis Iliadis, O. Aina, M. Mattingly, L. Stecker, E. Martin, Undoped InP/InGaAs heterostructure insulated gate FETs grown by OMVPE with PECVD deposited SiO2 as gate insulator, IEEE Elect. Dev. Lett., Vol = 9, pp. = 0, , 500- 502, 1988, |
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| Agis Iliadis, O. Aina, M. Mattingly, L. Stecker, E. Hempfling, E. Martin, Microwave and DC characteristics of InP/InGaAs heterostructure insulated gate FETs employing InAlAs as the gate insulator, Electronics Letters, Vol = 24, pp. = 0, , 1242-1243, 1988, |
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| Georgios Flessas, Finite Dimensional I, Finite Dimensional I, 1988 |
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| 1987 |
| Agis Iliadis, Barrier height reduction in Au Ge Schottky contacts to n type GaAs, J. Vac. Sci. Technology B, Vol = 5, pp. = 0, , 1340-1345, 1987, |
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| 1986 |
| Agis Iliadis, C. Stanley, T. Martin, K. Prior, G. Davies, The influence of growth conditions on undoped and S doped InP grown by MBE, J. Appl. Phys., Vol = 60, pp. = 0, , 213-218, 1986, |
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| 1985 |
| Georgios Flessas, An analysis of the Lorenz equations: stable exact solutions, Physics Letters A, Vol = 108, pp. = 0, , 4, 1985, |
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| Agis Iliadis, C. Stanley, C. Whitehouse, T. Martin, D. Sykes, Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy, Appl. Phys. Lett., Vol = 46, pp. = 0, , 994-996, 1985, |
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| 1984 |
| Georgios Flessas, R. Whitehead, Analytic treatment of the ax2 + bx4 oscillator, Journal of Mathematical Physics, Vol = 25, pp. = 0, , 910, 1984, |
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| Georgios Flessas, On a field-theoretic non-polynomial interaction, Physics Letters A, Vol = 100, 383, 1984 |
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English