| 1989 |
| Agis Iliadis, D. Ioannou, S. Laih, E. Martin, Deep states at the interface between SiO2 and MBE grown InP, J. Appl. Physics, Vol = 65, pp. = 0, , 4805-4808, 1989, |
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| Agis Iliadis, S. Laih, E. Martin, Deep traps in n InP grown by MBE, Appl. Phys. Lett., Vol = 54, pp. = 0, , 1436-1438, 1989, |
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| Agis Iliadis, A. Georgakilas, Z. Hatzopoulos, A. Christou, Growth of InGaAs on silicon by MBE, Materials Letters, Vol = 7, pp. = 0, , 456-460, 1989, |
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| Agis Iliadis, Nearly ideal enhanced barrier height Schottky contacts to n InP for MESFET applications, Electronics Letters, Vol = 25, pp. = 0, , 572-573, 1989, |
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| Agis Iliadis, A. Georgakilas, A. Christou, N. Flevaris, Defect structure of InGaAs/GaAs grown on misoriented (100) silicon by MBE, Materials Letters, Vol = 8, pp. = 0, , 109-111, 1989, |
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| Agis Iliadis, O. Aina, W. Lee, N channel depletion mode InP FET with enhanced barrier height gates, IEEE Electron Device Letters, Vol = 10, pp. = 0, , 370-372, 1989, |
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| Agis Iliadis, A. Christou, E. Roditi, N channel InP FET with amorphous Si:H gates, Appl. Phys. Letters, Vol = 55, pp. = 0, , 999-1001, 1989, |
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| 1988 |
| Spiros Cotsakis, J. Barrow, Inflation and the Conformal Structure of Higher-Order Gravity Theories, Phys. Lett., Vol = B214, pp. = 0, , 515-518, 1988, |
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| Agis Iliadis, J. Huang, D. Ioannou, SEM EBIC studies of (In)GaAs grown by MBE, J. Scan. Electron Microscopy, Vol = 2, pp. = 0, , 129-132, 1988, |
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| Agis Iliadis, S. Ovadia, The 1.380eV and 1.360 eV photoluminescence peaks in InP grown by MBE, J. Appl. Phys., Vol = 63, pp. = 0, , 5460-5463, 1988, |
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Greek