| 1985 |
| Agis Iliadis, C. Stanley, D. Sykes, Acceptor impurities in inadvertently doped and S doped InP grown by MBE, In |
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| 1987 |
| Agis Iliadis, D. Ioannou, S. Laih, E. Martin, DLTS study of interface and bulk traps in undoped InP grown by MBE, In |
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| Agis Iliadis, L. Aina, H. Hier, M. Mattingly, J. O'Connor, Infrared emission spectroscopy of deep levels in AlGaAs/GaAs, InP/InGaAs and InAlAs/InGaAs heterostructures, In |
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| Agis Iliadis, S. Ovadia, Selected photoluminescence transitions in unintentionally doped InP grown by molecular beam epitaxy, In |
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| 1988 |
| Agis Iliadis, O. Aina, L. Stecker, E. Martin, M. Mattingly, YES, InP/InGaAs heterostructure insulated gate FET's, In |
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| Agis Iliadis, YES, Schottky barrier height enhancement in n InP for MESFET applications, In |
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| 1989 |
| Agis Iliadis, High speed circuit reliability, In |
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| Agis Iliadis, O. Aina, W. Lee, A study of enhanced barrier gates for n InP MESFET’s, In |
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| 1990 |
| Agis Iliadis, J. Zahurak, D. Sivco, A. Cho, AlInAs/InGaAs superlattice channel heterostructure FET with high positive negative transconductance, In |
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| Agis Iliadis, The InP/SiO2 Interface, In |
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