| 1991 |
| Agis Iliadis, A. Dimoulas, A. Georgakilas, A. Christou, A. Konstantinidis, K. Tsagaraki, J. Stoemenos, Molecular beam epitaxy of InGaAs on Si, Crystal Properties and Preparation, Vol = 36-38, pp. = 0, , 407-416, 1991, |
| | |
| 1990 |
| Agis Iliadis, O. Aina, M. Mattingly, E. Hempfling, E. Martin, Highly stable microwave performance of InP/InGaAs insulated gate heterojunction FET's, IEEE Trans. Electron Devices, Vol = 37, pp. = 0, , 1916-1917, 1990, |
| | |
| Agis Iliadis, J. Zahurak, D. Sivco, A. Cho, High transconductance AlInAs/InGaAs superlattice channel FET, Superlattices and Microstructures, Vol = 8, pp. = 1, , 137-140, 1990, |
| | |
| 1989 |
| Agis Iliadis, D. Ioannou, S. Laih, E. Martin, Deep states at the interface between SiO2 and MBE grown InP, J. Appl. Physics, Vol = 65, pp. = 0, , 4805-4808, 1989, |
| | |
| Agis Iliadis, S. Laih, E. Martin, Deep traps in n InP grown by MBE, Appl. Phys. Lett., Vol = 54, pp. = 0, , 1436-1438, 1989, |
| | |
| Agis Iliadis, A. Georgakilas, Z. Hatzopoulos, A. Christou, Growth of InGaAs on silicon by MBE, Materials Letters, Vol = 7, pp. = 0, , 456-460, 1989, |
| | |
| Agis Iliadis, Nearly ideal enhanced barrier height Schottky contacts to n InP for MESFET applications, Electronics Letters, Vol = 25, pp. = 0, , 572-573, 1989, |
| | |
| Agis Iliadis, A. Georgakilas, A. Christou, N. Flevaris, Defect structure of InGaAs/GaAs grown on misoriented (100) silicon by MBE, Materials Letters, Vol = 8, pp. = 0, , 109-111, 1989, |
| | |
| Agis Iliadis, O. Aina, W. Lee, N channel depletion mode InP FET with enhanced barrier height gates, IEEE Electron Device Letters, Vol = 10, pp. = 0, , 370-372, 1989, |
| | |
| Agis Iliadis, A. Christou, E. Roditi, N channel InP FET with amorphous Si:H gates, Appl. Phys. Letters, Vol = 55, pp. = 0, , 999-1001, 1989, |
| | |
English