| 1982 |
| Agis Iliadis, Auger analysis of chemically etched (100) GaAs surfaces, Solid State Communications, Vol = 44, pp. = 0, , 1519-1521, 1982, |
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| 1983 |
| Agis Iliadis, K. Singer, The role of Ge in Au Ge contacts to GaAs, Solid State Electronics, Vol = 26, pp. = 0, , 7-14, 1983, |
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| 1984 |
| Agis Iliadis, K. Singer, Metallurgical behavior of Ni/Au Ge and Ni/Au/Au Ge ohmic contacts to GaAs, Solid State Communications, Vol = 49, pp. = 0, , 99-101, 1984, |
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| 1985 |
| Agis Iliadis, C. Stanley, C. Whitehouse, T. Martin, D. Sykes, Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy, Appl. Phys. Lett., Vol = 46, pp. = 0, , 994-996, 1985, |
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| 1986 |
| Agis Iliadis, C. Stanley, T. Martin, K. Prior, G. Davies, The influence of growth conditions on undoped and S doped InP grown by MBE, J. Appl. Phys., Vol = 60, pp. = 0, , 213-218, 1986, |
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| 1987 |
| Agis Iliadis, Barrier height reduction in Au Ge Schottky contacts to n type GaAs, J. Vac. Sci. Technology B, Vol = 5, pp. = 0, , 1340-1345, 1987, |
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| 1988 |
| Agis Iliadis, J. Huang, D. Ioannou, SEM EBIC studies of (In)GaAs grown by MBE, J. Scan. Electron Microscopy, Vol = 2, pp. = 0, , 129-132, 1988, |
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| Agis Iliadis, S. Ovadia, The 1.380eV and 1.360 eV photoluminescence peaks in InP grown by MBE, J. Appl. Phys., Vol = 63, pp. = 0, , 5460-5463, 1988, |
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| Agis Iliadis, J. Huang, D. Ioannou, Deep states and misfit dislocations in indium doped GaAs Layers grown by MBE, Appl. Phys. Lett., Vol = 52, pp. = 0, , 2258-2260, 1988, |
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| Agis Iliadis, O. Aina, M. Mattingly, L. Stecker, E. Martin, Undoped InP/InGaAs heterostructure insulated gate FETs grown by OMVPE with PECVD deposited SiO2 as gate insulator, IEEE Elect. Dev. Lett., Vol = 9, pp. = 0, , 500- 502, 1988, |
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English