| 2002 |
| Agis Iliadis, R. Vispute, T. Venkatesan, K. Jones, Ohmic Metallization Technology for Wide Band-Gap Semiconductors, Thin Solid Films, Vol = 420-421C, pp. = 0, , 474-482, 2002, |
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| 1999 |
| Agis Iliadis, A. Caviglia, A Large-Signal SOI MOSFET Model Including Dynamic Self-Heating Based on Small-Signal Model Parameters, IEEE Trans. Electron Devices, Vol = 46, pp. = 4, , 762-768, 1999, |
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| Agis Iliadis, A. Patel, R. Vispute, V. Talyansky, R. Sharma, S. Choopun, T. Venkatesan, M. He, R. Enck, W. Sarney, Pulsed Laser Deposition and Processing of Wide Band Gap Semiconductors and Related Materials, J. Electronic Materials, Vol = 28, pp. = 3, , 275-286, 1999, |
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| Agis Iliadis, R. Vispute, V. Talyansky, R. Sharma, T. Venkatesan, J. Yang, M. Wood, S. Andronescu, J. Orloff, A. Stanishevsky, Focused Ion Beam Assisted Ohmic Metallizations to p-6H-SiC, J. Electronic Materials, Vol = 28, pp. = 3, , 136-140, 1999, |
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| Agis Iliadis, J. Zahurak, W. Ted Massellink, T. Neal, Lateral Diffusion of Alloyed AuGe Based Source-Drain Contacts in AlInAs/InGaAs/InP MODFETs, J. Electronic Materials, Vol = 28, pp. = 8, , 944-948, 1999, |
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| Agis Iliadis, R. Vispute, R. Sharma, S. Choopun, T. Venkatesan, W. Noch, A. Balsamo, D. Look, Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire, Appl. Phys. Lett., Vol = 75, pp. = 25, , 3947-3949, 1999, |
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| 1998 |
| Agis Iliadis, R. Vispute, V. Talyansky, R. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. Jones, Y. Li, L. Salamanca-Riba, Advances in Pulsed Laser Deposition of Nitrides and Their Integration with Oxides, Appl. Surf. Sci., Vol = 127-129, pp. = 0, , 431-439, 1998, |
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| Agis Iliadis, R. Vispute, V. Talyansky, R. Sharma, T. Venkatesan, K. Jones, M. Wood, Y. Li, L. Salamanca-Riba, R. Ramesh, Fabrication and Characterization of Epitaxial AlN/TiN Bilayers on Sapphire, Thin Solid Films, Vol = 323, pp. = 1, , 37-41, 1998, |
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| Agis Iliadis, R. Vispute, V. Talyansky, R. Sharma, T. Venkatesan, K. Jones, M. Wood, S. Andronescu, K. Edinger, J. Orloff, Ohmic Contacts to p-6H-SiC Using Focused Ion Beam Surface Modification and Pulsed Laser Epitaxial TiN Metal Deposition, Appl. Phys. Lett., Vol = 73, pp. = 24, , 3545-3547, 1998, |
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| Agis Iliadis, R. Vispute, V. Talyansky, R. Sharma, S. Choopun, T. Venkatesan, M. He, X. Tang, J. Halpern, M. Spenser, Heteroepitaxy of ZnO on GaN and its Implications for Hybrid Optoelectronic Devices, Appl. Phys. Lett., Vol = 73, pp. = 0, , 348-350, 1998, |
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English