Octopus: University of The Aegean Research & Project Outputs System

Περιοδικό

1982
Agis Iliadis, Auger analysis of chemically etched (100) GaAs surfaces, Solid State Communications, Vol = 44, pp. = 0, , 1519-1521, 1982,
1983
Agis Iliadis, K. Singer, The role of Ge in Au Ge contacts to GaAs, Solid State Electronics, Vol = 26, pp. = 0, , 7-14, 1983,
1984
Agis Iliadis, K. Singer, Metallurgical behavior of Ni/Au Ge and Ni/Au/Au Ge ohmic contacts to GaAs, Solid State Communications, Vol = 49, pp. = 0, , 99-101, 1984,
1985
Agis Iliadis, C. Stanley, C. Whitehouse, T. Martin, D. Sykes, Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy, Appl. Phys. Lett., Vol = 46, pp. = 0, , 994-996, 1985,
1986
Agis Iliadis, C. Stanley, T. Martin, K. Prior, G. Davies, The influence of growth conditions on undoped and S doped InP grown by MBE, J. Appl. Phys., Vol = 60, pp. = 0, , 213-218, 1986,
1987
Agis Iliadis, Barrier height reduction in Au Ge Schottky contacts to n type GaAs, J. Vac. Sci. Technology B, Vol = 5, pp. = 0, , 1340-1345, 1987,
1988
Agis Iliadis, J. Huang, D. Ioannou, SEM EBIC studies of (In)GaAs grown by MBE, J. Scan. Electron Microscopy, Vol = 2, pp. = 0, , 129-132, 1988,
Agis Iliadis, S. Ovadia, The 1.380eV and 1.360 eV photoluminescence peaks in InP grown by MBE, J. Appl. Phys., Vol = 63, pp. = 0, , 5460-5463, 1988,
Agis Iliadis, J. Huang, D. Ioannou, Deep states and misfit dislocations in indium doped GaAs Layers grown by MBE, Appl. Phys. Lett., Vol = 52, pp. = 0, , 2258-2260, 1988,
Agis Iliadis, O. Aina, M. Mattingly, L. Stecker, E. Martin, Undoped InP/InGaAs heterostructure insulated gate FETs grown by OMVPE with PECVD deposited SiO2 as gate insulator, IEEE Elect. Dev. Lett., Vol = 9, pp. = 0, , 500- 502, 1988,

Συνέδριο

1988
Agis Iliadis, O. Aina, E. Martin, H. Hier, A. Fathimulla, Observation of premature drain source breakdown in heterojunction FET’s, GaAs Reliability Workshop, , , , 1988, Nashville, TN,
1989
Agis Iliadis, O. Aina, W. Lee, Enhanced Schottky barrier gates for power n InP MESFET’s, NOSC/NRL InP Microwave/Millimeter Wave Technology Workshop, , 241-246, , 1989, ,
1990
Agis Iliadis, O. Aina, M. Mattingly, E. Martin, W. Lee, Insulated and passivated gate technology for InP and InP/InGaAs FET’s, InP and Related Materials Conference, , 282-290, , 1990, ,
1991
Agis Iliadis, A. Christou, P. Tang, Negative Photoconductivity in dual channel InGaAs pseudomorphic HEMT’s, International Semiconductor Device Research Symposium (ISDRS’91), , 313, , 1991, ,
Agis Iliadis, A. Christou, P. Tang, Modulation doped channel metal insulator hetero junction FET: Performance Reliability and comparison using a Quasi charge control model, International Semiconductor Device Research Symposium (ISDRS’91), , 659, , 1991, ,
1992
Agis Iliadis, W. Lee, S. Tabatabaei, Measurement of interface states distribution at the gates of InP FET’s, Indium Phosphide and Related Materials Conference, , 661-665, , 1992, ,
Agis Iliadis, A. Caviglia, A new method for characterizing dynamic self-heating in SOI MOSFETs, IEEE International SOI Conference, , , Οκτώβριος, 1992, ,
1993
Agis Iliadis, J. Zahurak, S. Rishton, W. Masselink, Effect of Electron Transport Characteristics on FET Performance in InGaAs/InAlAs Heterostructures, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, , 270-278, , 1993, ,
Agis Iliadis, J. Zahurak, S. Rishton, W. Masselink, Electron Transport in Doped InGaAs/InAs Quantum Wells and the Effect on FET Performance, International Semiconductor Device Research Symposium (ISDRS’93), , 795-798, , 1993, ,
1994
Agis Iliadis, A. Caviglia, A Self Aligned Cobalt Silicide T Gate Process and It’s Applications to SOI Microwave MOSFETs, 185th ECS/SOI Symposium, , , , 1994, San Fransisco,

Κεφάλαιο σε βιβλίο

1985
Agis Iliadis, C. Stanley, D. Sykes, YES, pp. = , Acceptor impurities in inadvertently doped and S doped InP grown by MBE
1987
Agis Iliadis, D. Ioannou, S. Laih, E. Martin, YES, pp. = , DLTS study of interface and bulk traps in undoped InP grown by MBE
Agis Iliadis, L. Aina, H. Hier, M. Mattingly, J. O'Connor, YES, pp. = , Infrared emission spectroscopy of deep levels in AlGaAs/GaAs, InP/InGaAs and InAlAs/InGaAs heterostructures
Agis Iliadis, S. Ovadia, pp. = , Selected photoluminescence transitions in unintentionally doped InP grown by molecular beam epitaxy
1988
Agis Iliadis, O. Aina, L. Stecker, E. Martin, M. Mattingly, pp. = , InP/InGaAs heterostructure insulated gate FET's
Agis Iliadis, pp. = , Schottky barrier height enhancement in n InP for MESFET applications
1989
Agis Iliadis, YES, pp. = , High speed circuit reliability
Agis Iliadis, O. Aina, W. Lee, pp. = , A study of enhanced barrier gates for n InP MESFET’s
1990
Agis Iliadis, J. Zahurak, D. Sivco, A. Cho, YES, pp. = , AlInAs/InGaAs superlattice channel heterostructure FET with high positive negative transconductance
Agis Iliadis, YES, pp. = , The InP/SiO2 Interface