| 1982 |
| Agis Iliadis, (1982), Auger analysis of chemically etched (100) GaAs surfaces, Solid State Communications, Vol = 44, (0), pp. = 1519-1521 |
| | |
| 1983 |
| Agis Iliadis, K. Singer, (1983), The role of Ge in Au Ge contacts to GaAs, Solid State Electronics, Vol = 26, (0), pp. = 7-14 |
| | |
| 1984 |
| Agis Iliadis, K. Singer, (1984), Metallurgical behavior of Ni/Au Ge and Ni/Au/Au Ge ohmic contacts to GaAs, Solid State Communications, Vol = 49, (0), pp. = 99-101 |
| | |
| 1985 |
| Agis Iliadis, C. Stanley, C. Whitehouse, T. Martin, D. Sykes, (1985), Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy, Appl. Phys. Lett., Vol = 46, (0), pp. = 994-996 |
| | |
| 1986 |
| Agis Iliadis, C. Stanley, T. Martin, K. Prior, G. Davies, (1986), The influence of growth conditions on undoped and S doped InP grown by MBE, J. Appl. Phys., Vol = 60, (0), pp. = 213-218 |
| | |
| 1987 |
| Agis Iliadis, (1987), Barrier height reduction in Au Ge Schottky contacts to n type GaAs, J. Vac. Sci. Technology B, Vol = 5, (0), pp. = 1340-1345 |
| | |
| 1988 |
| Agis Iliadis, J. Huang, D. Ioannou, (1988), SEM EBIC studies of (In)GaAs grown by MBE, J. Scan. Electron Microscopy, Vol = 2, (0), pp. = 129-132 |
| | |
| Agis Iliadis, S. Ovadia, (1988), The 1.380eV and 1.360 eV photoluminescence peaks in InP grown by MBE, J. Appl. Phys., Vol = 63, (0), pp. = 5460-5463 |
| | |
| Agis Iliadis, J. Huang, D. Ioannou, (1988), Deep states and misfit dislocations in indium doped GaAs Layers grown by MBE, Appl. Phys. Lett., Vol = 52, (0), pp. = 2258-2260 |
| | |
| Agis Iliadis, O. Aina, M. Mattingly, L. Stecker, E. Martin, (1988), Undoped InP/InGaAs heterostructure insulated gate FETs grown by OMVPE with PECVD deposited SiO2 as gate insulator, IEEE Elect. Dev. Lett., Vol = 9, (0), pp. = 500- 502 |
| | |
English